EPJ Web of Conferences 23, 00013 (2012)
https://doi.org/10.1051/epjconf/20122300013
https://doi.org/10.1051/epjconf/20122300013
Tunneling conductance in a system with strong electron correlation
1 Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea
2 Asia Pacific Center for Theoretical Physics, Pohang 790-784, Korea
We discuss the structure of tunneling conductance, the dI/dV lineshape, observed for a system with strong electron correlation. The structure of the dI/dV lineshape comprises zero-bias peak and two side peaks. We discuss the condition for compressing zero-bias peak and the origin of two side peaks. We explain why the tunneling conductance does not simply reflect the sample density of states in the tunneling experiment for a system with strong electron correlation.
© Owned by the authors, published by EDP Sciences, 2012
