Surface Carrier Dynamics on Semiconductor Studied with Femtosecond Core-Level Photoelectron Spectroscopy Using Extreme Ultraviolet High-Order Harmonic Source
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1, Wakamiya, Morinosato, Atsugi-shi, Kanagawa 243-0198, Japan
We have used a femtosecond time-resolved core-level surface PES system based on the 92-eV harmonic source to study the surface carrier dynamics that induces the transient SPV on semiconductor surfaces. We clarified the temporal evolution of the transient SPV characterized by the time of the photo-generated carrier separation and recombination. This result demonstrates the potential of this technique for clarifying the initial stage of the surface carrier dynamics after photoexcitation.
© Owned by the authors, published by EDP Sciences, 2013
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