EPJ Web of Conferences 41, 04018 (2013)
https://doi.org/10.1051/epjconf/20134104018
https://doi.org/10.1051/epjconf/20134104018
Depth-dependent Detection Mechanisms of Coherent Phonons in n-type GaAs
1 Nano-characterization Unit, National Institute for Materials Science, Tsukuba, 305-0047, Japan
2 Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
Transient reflectivity measurements at different probing wavelengths reveal detection mechanisms of coherent phonon and phonon-plasmon coupled modes of n-doped GaAs to be strongly depth-dependent due to the carrier depletion at the surface.
© Owned by the authors, published by EDP Sciences, 2013
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