https://doi.org/10.1051/epjconf/20135919004
Frequency upshift via flash ionization phenomena using semiconductor plasma
1 Graduate School of Engineering, Osaka University, 2-6 Yamada-oka, Suita, Osaka 565-0871, Japan
2 Japan Science and Technology Agency, CREST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
3 Department of Advanced Interdisciplinary Sciences, and Center for Optical Research & Education (CORE) Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585, Japan
4 Department of Physics, University of Nevada, Mail Stop 220, Reno, Nevada 89506, USA
a e-mail: higashi@cc.utsunomiya-u.ac.jp
b e-mail: yugami@cc.utsunomiya-u.ac.jp
c e-mail: sentoku@unr.edu
Published online: 15 November 2013
We have demonstrated frequency upshift in the terahertz region by flash ionization. The magnitude of upshift frequency is tuned by the laser intensity. A proof of principle experiment has been performed with a plasma creation time scale much shorter than the period of the electromagnetic wave and a plasma length longer than its wavelength. Frequency upshifted from 0.35 to 3.5 THz by irradiating a ZnSe crystal with a ultra-short laser pulse has been observed.
© Owned by the authors, published by EDP Sciences, 2013
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