Magnetotransport of indium antimonide doped with manganese
1 Department of Mathematics and Physics, Lappeenranta University of Technology, PO Box 20, FIN-53851 Lappeenranta, Finland
2 P.N. Lebedev Physical Institute RAS, Leninskiy prospekt, 53, Moscow, Russia
3 South-West State University, 50 let Oktjabrja Str., 305040 Kursk, Russia
4 Institute of Applied Physics ASM, Academiei Str. 5, MD-2028 Kishinev, Moldova
5 A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia
Published online: 3 July 2014
Magnetotransport, including the magnetoresistance (MR) and the Hall effect, isinvestigated in polycrystalline In1-xMnxSb samples with x = 0.02 – 0.06, containing nanosize MnSb precipitates. The relative MR, Δρ/ρ, is positive within the whole range of B= 0 – 10 T and T ~ 20 – 300 K. The Hall resistivity, ρH, exhibits a nonlinear dependence on B up to the room temperature.MR is interpreted with the two-band model, suggesting two types of holes with different concentration and mobility. In addition, analysis of ρH (B, T) is performed by taking into account both the normal and the anomalous contributions. The latter is attributable to the effect of MnSb nanoprecipitates, having the ferromagnetic Curie temperature well above 300 K.
© Owned by the authors, published by EDP Sciences, 2014
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 2.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.