Response of Graphene Based Gated Nanodevices Exposed to THz Radiation
1 Moscow State Pedagogical University, 1 Malaya Pirogovskaya, 119991, Moscow
2 Prokhorov General Physics Institute of the Russian Academy of Sciences 38 Vavilov Str., 119991, Moscow
3 Laboratoire Charles Coulomb UMR 5221, Université Montpellier 2, F-34095, Montpellier, France
4 National Research University Higher School of Economy, 20 Myasnitskaya, 101000, Moscow
a Corresponding author: firstname.lastname@example.org
Published online: 25 September 2015
In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
Key words: graphene / terahertz radiation / terahertz radiation detection
© Owned by the authors, published by EDP Sciences, 2015
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.