Monte Carlo simulation of particle-induced bit upsets
1 Université de Montpellier, Institut d’Electronique et des Systèmes, UMR-CNRS 5214, France
2 Université de Nîmes, France
* Corresponding author: firstname.lastname@example.org
Published online: 25 September 2017
We investigate the issue of radiation-induced failures in electronic devices by developing a Monte Carlo tool called MC-Oracle. It is able to transport the particles in device, to calculate the energy deposited in the sensitive region of the device and to calculate the transient current induced by the primary particle and the secondary particles produced during nuclear reactions. We compare our simulation results with SRAM experiments irradiated with neutrons, protons and ions. The agreement is very good and shows that it is possible to predict the soft error rate (SER) for a given device in a given environment.
© The Authors, published by EDP Sciences, 2017
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