https://doi.org/10.1051/epjconf/202023305004
CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe
1 CFisUC, Department of Physics, University of Coimbra, R. Larga, P-3004-516 Coimbra, Portugal
2 Helmholtz-Zentrum Berlin für Materialien und Energie, 14109 Berlin, Germany
3 International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
4 Department of Physics, University of Aveiro, 3810-193 Aveiro, Portugal
5 Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
* Corresponding author: lena@uc.pt
Published online: 16 April 2020
The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studied using implanted positive muons as a probe. A depth resolved analysis of the muon data suggests that both CdS and ZnSnO reduce the width of a defect layer present at the CIGS surface to about half its original value. Additionaly, CdS is able to reduce the intensity of the distur¬bance in the defected region, possibly due to a surface reconstrution in CIGS.
© The Authors, published by EDP Sciences, 2020
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
