CdS versus ZnSnO buffer layers for a CIGS solar cell: a depth-resolved analysis using the muon probe
1 CFisUC, Department of Physics, University of Coimbra, R. Larga, P-3004-516 Coimbra, Portugal
2 Helmholtz-Zentrum Berlin für Materialien und Energie, 14109 Berlin, Germany
3 International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal
4 Department of Physics, University of Aveiro, 3810-193 Aveiro, Portugal
5 Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
* Corresponding author: email@example.com
Published online: 16 April 2020
The influence of a buffer layer in the surface of a Cu(In,Ga)Se2 (CIGS) solar cell material is studied using implanted positive muons as a probe. A depth resolved analysis of the muon data suggests that both CdS and ZnSnO reduce the width of a defect layer present at the CIGS surface to about half its original value. Additionaly, CdS is able to reduce the intensity of the distur¬bance in the defected region, possibly due to a surface reconstrution in CIGS.
© The Authors, published by EDP Sciences, 2020
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