https://doi.org/10.1051/epjconf/202327801002
Design Considerations for Boron-Diffused and Implanted 4H-SiC Epitaxial Neutron Detectors for Dosimetry and Monitoring Applications
1
Ruddy Consulting, 2162 Country Manor Dr., Mount Pleasant, South Carolina, USA
2
Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, USA
* Corresponding author: FrankHRuddy@gmail.com
Published online: 2 March 2023
Thermal-neutron detectors based on 4H-SiC semiconductor and 10B converter reactions have many advantages for neutron dosimetry and monitoring applications. These radiation-resistant detectors are capable of stable operation in elevated-temperature environments up to 700 °C for extended periods. The recent development of SiC detectors where the 10B is incorporated into the detector by ion implantation or diffusion leads to interesting application-specific design possibilities. The design of boron-diffused detectors is discussed as well as ways to optimize their design.
© The Authors, published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
