Design Considerations for Boron-Diffused and Implanted 4H-SiC Epitaxial Neutron Detectors for Dosimetry and Monitoring Applications
Ruddy Consulting, 2162 Country Manor Dr., Mount Pleasant, South Carolina, USA
2 Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina, USA
* Corresponding author: FrankHRuddy@gmail.com
Published online: 2 March 2023
Thermal-neutron detectors based on 4H-SiC semiconductor and 10B converter reactions have many advantages for neutron dosimetry and monitoring applications. These radiation-resistant detectors are capable of stable operation in elevated-temperature environments up to 700 °C for extended periods. The recent development of SiC detectors where the 10B is incorporated into the detector by ion implantation or diffusion leads to interesting application-specific design possibilities. The design of boron-diffused detectors is discussed as well as ways to optimize their design.
© The Authors, published by EDP Sciences, 2023
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