https://doi.org/10.1051/epjconf/202533301003
Characterization of thin natSi targets
1 Instituto de Física (UNAM), Sendero Bicipuma, C.U., Coyoacán, 04510 Ciudad de México, CDMX
2 Instituto de Ciencias Nucleares (UNAM), Cto. Exterior, C.U., Coyoacán, 04510 Ciudad de México, CDMX
3 Instituto de Investigaciones en Materiales (UNAM), Circuito de la, Circuito Exterior, Investigación Científica S/N, C.U., 04510 Ciudad de México, CDMX
* e-mail: javier.masruiz91@gmail.com
Published online: 1 August 2025
The production of 26Al is important in the field of stellar nucleosynthesis. The study for the production of 26Al from the 28Si(d, α) reaction at energies that are close to the Coulomb barrier requires thin silicon targets. This work reports the characterization of thin silicon targets by using the RBS (Rutherford Backscattering Spectrometry) technique, with proton beams, 12C and 28Si, taking into account a scattering angle of 140◦ at a range of energies ranging from 841 keV to 7105 keV. This experiment was carried out at the Nuclear Physics line of the National Accelerator Mass Spectrometry Laboratory (LEMA) of the Institute of Physics of UNAM. The first three targets to be characterized, labelled C11, C21 and C31 were fabricated at the Instituto de Investigaciones en Materiales (IIM-UNAM). The fourth target F11 was manufactured at the Microscopy Laboratory of the Institute of Physics (IF-UNAM). The thickness of the targets C11, C21 and C31 was 1016 atoms/cm2. The thickness of the F11 target is 1017 atoms/cm2, therefore, this target is suitable to be used in the production of 26Al.
© The Authors, published by EDP Sciences, 2025
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