https://doi.org/10.1051/epjconf/202328701004
Aluminum nitride on insulator: Material and processing optimization for integrated photonic applications
1 Silicon Austria Labs GmbH, Villach, Austria
2 Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
3 The University of Sydney, Sydney, Australia
* Corresponding author: jasmin.spettel@silicon-austria.com
Published online: 18 October 2023
Thin film aluminum nitride on insulator (AlNOI) has gained attention as a promising material platform for integrated photonic circuits (PICs) due to its ability to operate over a wide spectral range covering the ultra-violet to mid-infrared regions, while enabling a broad range of passive photonic functionalities. This study aims to optimize sputtered AlNOI films for PICs, with an emphasis on the spectroscopic ellipsometry study over a range from 0.19 µm to 25 µm. Furthermore, we discuss our approach for fabricating AlNOI PICs components, with a particular focus on optimizing the etching process to attain smooth sidewall waveguides.
© The Authors, published by EDP Sciences, 2023
This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
